Radiation-hardened semiconductor qualified for military satellitesNews
June 08, 2021
CHANDLER, Ariz. Microchip Technology Inc. has announced the qualification of its M6 MRH25N12U3 radiation-hardened, metal–oxide–semiconductor field-effect transistor (MOSFET) for commercial aerospace and defense space applications.
Microchip’s radiation-hardened M6 MRH25N12U3 MOSFET is designed to provide the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching.
The MOSFET is engineered to withstand the harsh environments of space, extend reliability of power circuitry, and meet all requirements of MIL-PRF19500/746 with enhanced performance.
Microchip completed testing for Defense Logistics Agency (DLA) review and qualification for the device’s sourcing in the U.S. military supply chain. The company also claims that JANSR2N7593U3 certification is expected in June 2021.
The M6 MRH25N12U3 MOSFET is designed for future satellite system designs as well as serving as an alternate source in existing systems, according to Microchip.