Thermally enhanced high-power RF for amplifier applications
ProductJune 02, 2015
Engineers at Infeon have designed a LDMOS field-effect transistor (FET) designed for use in radar power-amplifier applications in the 1,200 to 1,400 MHz frequency band. Dubbed PTVA127002EV, it features high gain and thermally enhanced package with bolt-down flange.
Engineers at Infeon have designed a LDMOS field-effect transistor (FET) designed for use in radar power-amplifier applications in the 1,200 to 1,400 MHz frequency band. Dubbed PTVA127002EV, it features high gain and thermally enhanced package with bolt-down flange.
Featured on the FET are broadband input and output matching, high gain and efficiency, integrated electrostatic discharge protection, and low thermal resistance. The rugged FET is lead-free and RoHS compliant; it is also capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 •S, 10 percent duty cycle. The transistor is based on a 50-V LDMOS power transistor, with a tested drain efficiency of typically 55 percent across the rated band. Voltage at the drain source tested at 105 V, with voltage at the gate source 3 to 4 V.
