Military Embedded Systems

GaN X-band FMEs for radar applications released by Qorvo


June 12, 2018

Mariana Iriarte

Technology Editor

Military Embedded Systems

GaN X-band FMEs for radar applications released by Qorvo
Image by Qorvo

IMS 2018 - PHILADELPHIA. RF solutions provider Qorvo is introducing X-band front end modules (FEMs) designed for use in next-generation active electronically scanned array (AESA) radar at this year's International Microwave Symposium (IMS).


These export-compliant gallium nitride (GaN) products also meet the need for high RF power survivability essential for mission-critical operations, officials explain. The new Qorvo FEMs – the QPM2637 and QPM1002 – enable higher efficiency, reliability, power and survivability, as well as savings in size, weight, and cost.

The GaN FEMs provide four functions in a single compact package, including an RF switch, power amplifier, low noise amplifier, and limiter. They can withstand up to 4W of input power on the receive side without permanent damage, compared with a typical gallium arsenide (GaAs) low noise amplifier, which can be damaged by less than 100mW of input power.

The demand for RF front end components for radar applications is expected to exceed $1 billion by 2022, growing at 9% CAGR over the next five years. The market for RF GaN devices for defense applications such as radar, electronic warfare and communications is projected to grow at 24% CAGR over the next five years, as the adoption rate of GaN significantly outpaces other technology choices.

These new products - which are EAR99 export compliant --are now sampling to qualified customers. Qorvo officials will be showcasing its RF solutions during IMS in Booth 725.


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