GaN transistor steps up for troposcatter communications applications
ProductNovember 16, 2014
With the recently announced CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT), Cree is aiming at C-Band applications, used frequently in satellite communications. The HEMT is a GaN transistor for tropospheric scatter (troposcatter) communications applications rated...
With the recently announced CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT), Cree is aiming at C-Band applications, used frequently in satellite communications. The HEMT is a GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200-W continuous wave and 4.4- to 5.0-GHz operation.
The new 50-ohm, internally matched 200-W GaN HEMTs exhibit 180-W typical PSAT and 11.5-dB typical power gain, with 48 percent typical power efficiency. The transistors enable solid-state power amplifiers (SSPAs) to effectively replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. With their smaller footprint and lifespan over TWTs, GaN-enabled SSPAs can reduce overall system weight and mitigate both operational and replacement costs. The 200-W HEMTs are supplied in a ceramic/metal flange package measuring 23.75-24.26 mm (0.935-0.955”) by 23.01 mm (0.906”) including the gain and drain, or 17.25-17.55 mm (0.679-0.691”) without.
